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26 July 1999 Combination of OPC and AttPSM for patterning sub-0.18-μm logic devices
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Abstract
Phase-shifting mask (PSM) and modified illumination techniques have shown promise in improving resolution and process latitude in optical lithography. Here we present a combination of attenuated PSM and optical proximity correction (OPC) for the patterning of 0.15 micrometers polysilicon lines. Using the combination method, we obtained a depth of focus of 0.9 micrometers DOF for 0.15 micrometers isolated lines, much wider than that achieved in a binary mask without OPC. Furthermore, we confirmed that this method is also effective for improving the exposure latitude.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hung Jui Kuo, Chia-Hui Lin, San-De Tzu, and Anthony Yen "Combination of OPC and AttPSM for patterning sub-0.18-μm logic devices", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354356; https://doi.org/10.1117/12.354356
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