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26 July 1999 Customized off-axis illumination aperture filtering for sub-0.18-μm KrF lithography
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Abstract
Off-axis illumination (OAI) has been shown as one of the most practical resolution enhancement techniques (RET) available for optical lithography. A customized off-axis illumination aperture filter (CIF) was designed to gain the benefits of OAI and keep the optical proximity effect (OPE) in a manage-able range for sub-0.18micrometers line and space patterns. The performance of the filter comparing with conventional, annular and quadruple illuminations in term of depth of focus, OPE, throughput, dose and power uniformity for both 0.18micrometers and 0.15micrometers NA Nikon KrF excimer laser stepper with a maximum partial coherence factor of 0.8 is presented in the paper. A brief description of the design principle of the filter is also given. A summarized conclusion on the weakness of the filter and possible improvements is also presented in the paper.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chin Chiu Hsia, Tsai-Sheng Gau, Chuen-Huei Yang, Ru-Gun Liu, ChungHsing Chang, Li-Jui Chen, Chien-Ming Wang, J. Fung Chen, Bruce W. Smith, Gue-Wuu Hwang, JiannWen Lay, and Dong-Yuan Goang "Customized off-axis illumination aperture filtering for sub-0.18-μm KrF lithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354354
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