26 July 1999 Design, reticle, and wafer OPC manufacturability for the 0.18-μm lithography generation
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Abstract
2D optical proximity correction (OPC) will be a requirement for patterning the 0.18 micrometers lithographic generation with current 0.6NA 248nm wavelength toolsets. This paper analyzes the process transformation of 2D OPC shapes between the design, reticle and wafer stages of patterning 0.18 micrometers random logic circuits. High resolution reticle SEM photos showcase reticle patterning non-linearities which must be understood to fully optimize OPC designs. Experiment and tuned lithography simulation are used to highlight the errors which can occur if these non-linearities are ignored. Significant differences are observed between OPC shapes for brightfield and darkfield features. Comparisons between OPC shapes patterned on electron-beam and optical-laser reticle writing tools are also provided as is a look ahead to the OPC requirements of the 0.15 micrometers generation.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin D. Lucas, Kevin D. Lucas, Martin McCallum, Martin McCallum, Bradley J. Falch, Bradley J. Falch, James L. Wood, James L. Wood, Franklin D. Kalk, Franklin D. Kalk, Robert K. Henderson, Robert K. Henderson, Drew R. Russell, Drew R. Russell, } "Design, reticle, and wafer OPC manufacturability for the 0.18-μm lithography generation", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354306; https://doi.org/10.1117/12.354306
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