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26 July 1999 Effects of phase-shift masks on across-field linewidth control
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Abstract
The concept of the iso-aberration dose is introduced and defined as the dose where the 'depth of aberration' is at a maximum. By allowing patterning of small isolated lines closer to the iso-aberration dose, the use of phase shift masks (PSMs) improves critical dimension (CD) sensitivity to lithographic tool aberrations. The use of specialized photo- resist and mask assist feature is also found to improve isolated line CD sensitivity to aberrations. The improvement in aberration sensitivity from PSM results in improved across field linewidth control for some lithographic system but causes degraded CD control for other tools which are optimized for operation with standard binary reticles. Simulations show that the trim mask PSM approach has superior aberration sensitivity for patterning 100nm than multi-phase PSM approaches when the allowed phasewidth is restricted to a maximum value.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard E. Schenker "Effects of phase-shift masks on across-field linewidth control", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354332
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