26 July 1999 Feasibility of printing 0.1-μm technology with optical lithography
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Proceedings Volume 3679, Optical Microlithography XII; (1999); doi: 10.1117/12.354347
Event: Microlithography '99, 1999, Santa Clara, CA, United States
Abstract
In the same way as 248 nm lithography is now being pushed to 0.15 and even 0.13 micrometers technologies, 193 nm lithography is expected to be used for printing the 0.1micrometers technologies. In this paper, we show results of a simulation study using Prolith 6.0 to investigate the feasibility of printing the 0.1 micrometers dense lines and spaces and 70 nm isolated lines. Since good resists models for 193 nm lithography are not available yet, we extrapolated 248 nm resists models to 193nm and 157nm illumination. First the optimum NA/sigma settings are obtained for printing those features in different illumination modes. Therefore binary masks versus phase shifting techniques and conventional versus off-axis illumination are compared. Maximum DOF and EL for a system without lens aberrations are the main optimization criteria. Consequently CD variations is calculated when a full set of aberrations is taken into account. This realistic set of aberrations has been obtained by scaling down Zernike coefficients measured in 248nm systems and scaled at different RMS levels. Besides lens aberrations also stochastic variations in focus, exposure dose and reticle CD and phase are assumed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mireille Maenhoudt, Staf Verhaegen, Kurt G. Ronse, Donis G. Flagello, Bernd Geh, Winfried M. Kaiser, "Feasibility of printing 0.1-μm technology with optical lithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354347; https://doi.org/10.1117/12.354347
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KEYWORDS
Critical dimension metrology

Reticles

Electroluminescence

Printing

Lithography

Lithographic illumination

Photomasks

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