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26 July 1999 Flare impact on the intrafield CD control for sub-0.25-μm patterning
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Abstract
The aim of this paper is to investigate the intrafield flare distribution and its link with the intrafield CD variation for various ASML lithographic tools. Flare is measured as the required dose to clear a 100micrometers -large positive resist pattern and comparing it with dose-to-clear Eo. The reticle layout used is compared of a repetitive cell which allows for 77 measurements within a single 22 X 22 mm2 field. Experimental results show that in the field of a stepper, flare decreases almost linearly form center to edge. In the field of a scanner, the flare distribution result from the distribution inside the illumination slit which is ellipsoidal. Comparing the intrafield flare distribution to the intrafield CD uniformity , it appears that flare is responsible for a part of the across field CD variation. We will see in this paper how it is possible, using a method based on statistical considerations, to decorrelate both the contributions of mask CD errors and flare variation to the intrafield CD dispersion for dense lines and 1/3 for isolated lines. The intrafield flare variation is also found to contribute a lot to the signature of the CD uniformity and to the 3 sigma dispersion.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Emmanuelle Luce, Blandine Minghetti, Patrick Schiavone, Olivier Toublan, and Andre P. Weill "Flare impact on the intrafield CD control for sub-0.25-μm patterning", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354349
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