Full-depth optical proximity correction (FD-OPC) based on E-D forest

Burn Jeng Lin; Peter Young

doi:10.1117/12.354372

26 July 1999 Full-depth optical proximity correction (FD-OPC) based on E-D forest

Burn Jeng Lin, Peter Young

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354372
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

When the k₁ number approaches 0.6 and below, optical proximity correction (OPC) is inevitable. Most existing OPC schemes correct the image in the focal planes without considering the possibility of different optimum focuses for the features to be corrected. Furthermore, OPC is often conducted without optimizing NA and (sigma) before and after, to save experimental or simulation work. In this paper, a full-depth OPC scheme is presented. It optimizes the individual size bias of contributing features in the entire exposure-defocus space using the E-D tree methodology. In addition, the OPC scheme integrates with signamization to fully automatically optimize NA, (sigma) , and individual feature bias together.

Citation Download Citation

Burn Jeng Lin and Peter Young "Full-depth optical proximity correction (FD-OPC) based on E-D forest", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354372

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