26 July 1999 Impact of mask errors on full chip error budgets
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As lithography pushes to smaller and smaller features under the guidance of Moore's Law, patterned features smaller than the wavelength of light must be routinely manufactured. Lithographic yield in this domain is directly improved with the application of OPC to the pattern data. However, such corrections generally assume that the reticle can reproduce the benefits of OPC in some circumstances. In this paper, we present the characterization of the MEEF for contact holes. These are found to have significantly higher values for the MEEF than typically measured for isolated lines. Theoretical predictions are compared with experimental results. Good agreement is found at the center of the field only when the actual area of the contact hole as formed on the reticle is used as the metric of contact size. Across field variation, however, is found to be significant requires characterization for optimum yield to be achieved.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Franklin M. Schellenberg, Franklin M. Schellenberg, Victor V. Boksha, Victor V. Boksha, Nicolas B. Cobb, Nicolas B. Cobb, J. C. Lai, J. C. Lai, C. H. Chen, C. H. Chen, Chris A. Mack, Chris A. Mack, } "Impact of mask errors on full chip error budgets", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354339; https://doi.org/10.1117/12.354339


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