26 July 1999 Line-narrowed ArF excimer laser for 193-nm lithography
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Abstract
Recently, considerable progress has been made in the development of ArF excimer lasers for 193 nm lithography. A line-narrowed ArF excimer laser with a bandwidth of < 0.7 pm can be used with a refractive lens system. In this paper, we present a line-narrowed ArF excimer laser which we have developed for 193 nm lithography. This laser produces an output power of over 5 W with a 0.6 pm FWHM bandwidth at 1 kHz operation.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Saito, Takashi Saito, Ken-ichi Mitsuhashi, Ken-ichi Mitsuhashi, Motohiro Arai, Motohiro Arai, Kyouhei Seki, Kyouhei Seki, Akifumi Tada, Akifumi Tada, Tatsushi Igarashi, Tatsushi Igarashi, Kazuaki Hotta, Kazuaki Hotta, } "Line-narrowed ArF excimer laser for 193-nm lithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354312; https://doi.org/10.1117/12.354312
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