26 July 1999 Lithographic implications for Cu/low-k integration
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Abstract
Low dielectric constant materials in the back-end-of-line process are needed to reduce resistive-capacitive delays due to continually shrinking interconnect dimensions. Several organic dielectrics which have etch rates similar to photoresists, such as benzocyclobutene and diamond-like carbon, have been explored for compatibility with lithographic processes. In this paper we discuss integration issues from a lithographic perspective, including low-k materials selection and properties, integration sequences, use of hard masks and the effects on reflectivity, resist process compatibility and focus effects using an advanced DUV scanning system.
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Rebecca D. Mih, Rebecca D. Mih, Nora Chen, Nora Chen, Kenneth R. Jantzen, Kenneth R. Jantzen, James T. Marsh, James T. Marsh, Steven Schneider, Steven Schneider, } "Lithographic implications for Cu/low-k integration", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354401; https://doi.org/10.1117/12.354401
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