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26 July 1999 Lithographic implications for Cu/low-k integration
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Low dielectric constant materials in the back-end-of-line process are needed to reduce resistive-capacitive delays due to continually shrinking interconnect dimensions. Several organic dielectrics which have etch rates similar to photoresists, such as benzocyclobutene and diamond-like carbon, have been explored for compatibility with lithographic processes. In this paper we discuss integration issues from a lithographic perspective, including low-k materials selection and properties, integration sequences, use of hard masks and the effects on reflectivity, resist process compatibility and focus effects using an advanced DUV scanning system.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rebecca D. Mih, Nora Chen, Kenneth R. Jantzen, James T. Marsh, and Steven Schneider "Lithographic implications for Cu/low-k integration", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999);

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