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26 July 1999 Matching simulation and experiment for chemically amplified resists
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Abstract
In this paper, the method for tuning a lithography simulator to match simulation to experiment, proposed by Thornton and Mack, was extended to a chemically amplified deep-UV resist process. After performing the Thornton-Mack tuning, the post-exposure bake (PEB) parameters of the resist were adjusted in the simulator to mach experimental results. In particular, measurements of Eo versus time and temperature of the PEB were used to 'calibrate' the actual PEB hotplate to the simulated hotplate and to estimate the amount of base quencher in the resist. Once tuned, the simulator was used to predict CD performance and compared to experimental results.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris A. Mack, Monique Ercken, and Myriam Moelants "Matching simulation and experiment for chemically amplified resists", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354330
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