Method for choosing "generic" photoresist simulation parameters

Steven G. Hansen

doi:10.1117/12.354318

26 July 1999 Method for choosing "generic" photoresist simulation parameters

Steven G. Hansen

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354318
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

This paper describes a method for choosing 'generic' simulation parameters for photoresist and tests the utility of the approach. The method allows the parameters that best match the experimental result to be selected from a graph. Details consists of fixing certain standard parameters and systematically varying other key parameters, to generate an array of generic photoresists with a range of photospeed and resolution capabilities. For conventional resists, variation of dissolution curve details is shown to be successful. For chemically amplified system, the same approach is used as well as variation of two latent image altering parameters: amplification rate constant and quencher concentration. The utility of this method is examined by comparing these hypothetical generic photoresists to experimental data, to more complex actual dissolution curves, and to each other.

Citation Download Citation

Steven G. Hansen "Method for choosing "generic" photoresist simulation parameters", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354318

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