26 July 1999 New mask having functions of OAI and PSM to realize sub-0.2-μm patterns with 248 nm in microlithography
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Abstract
New mask, which combines off-axis illumination using micro- profile and phase shift layer, is proposed. The physical mechanism of resolution and DOF enhancement of the mask is briefly discussed. Some results of simulation to investigate the basic lithographic characteristics of the mask are presented. Finally, experiments in i-line exposure systems have been carried out, and the result verified the enhancement of lithographic performance. In i-line exposure systems, we obtained best resolution of 0.30 micron and 2.34 micron DOF for 0.6 micron feature size. In our simulation, with 248 nm exposure wavelength, 0.16 micron pattern size can be realized with 2.0 micron DOF, and the proximity effect decreased obviously.
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Xiangang Luo, Xiangang Luo, HanMin Yao, HanMin Yao, Xunan Chen, Xunan Chen, Feng Boru, Feng Boru, } "New mask having functions of OAI and PSM to realize sub-0.2-μm patterns with 248 nm in microlithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354391; https://doi.org/10.1117/12.354391
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