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26 July 1999 New trends in Brunner's relation: dielectric levels
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The goal of this paper is to understand the optical phenomena at dielectric levels. The purpose is also to quantify the impact of dielectric and resist thickness variations on the CD range with and without Bottom Anti Reflective COating (BARC). First we will show how all dielectric levels can be reduced to the stack metal/oxide/BARC/resist, and what are the contributions to resists and dielectric thickness range for each levels. Then a simple model will be developed to understand CD variation in this tack: by extending the Perot/Fabry model to the dielectric levels, developed by Brunner for the gate level, we can obtain a simple relation between the CD variation and all parameters. Experimentally CD variation for Damascene line level on 0.18micrometers technology has been measured depending on oxide thickness and resist thickness and can confirm this model. UV5 resist, AR2 BARC from Shipley and Top ARC from JSR have been used for these experiments. The main conclusions are: (1) Depending on your dielectric deposition and CMP processes, if resist thickness is controlled, a standard BARC process used for the gate is adapted to remove oxide thickness variation influence providing the optimized resist thickness is used. (2) If both resist thickness and dielectric thickness are uncontrolled, a more absorbent BARC is required.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yorick Trouiller, Anne Didiergeorges, Gilles L. Fanget, Cyrille Laviron, Corinne Comboure, and Yves Quere "New trends in Brunner's relation: dielectric levels", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999);

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