26 July 1999 Performance of a highly stable 2-kHz operation KrF laser
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Proceedings Volume 3679, Optical Microlithography XII; (1999); doi: 10.1117/12.354313
Event: Microlithography '99, 1999, Santa Clara, CA, United States
In the semiconductor industry, it is one of the most important issues to reduce manufacturing cost of the semiconductor device by increasing throughput. We have succeeded in the development of the high repetition rate excimer laser technology, and obtained the prospect of low CoO of the laser device. In this paper, we present the performance and advanced technologies of the newest model of the KrF excimer laser for microlithography; KLES-G20K. The laser achieves 20 W of output power with 0.6 pm bandwidth at 2 kHz. The pulse to pulse energy stability, 3 sigma is less than 6 percent and integrated energy stability is within +/- 0.4 percent. By our estimation, more than 50 percent of CoO of the laser device is cut by adopting developed machine compared to a present one.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsuo Enami, Masaki Nakano, Takayuki Watanabe, Ayako Ohbo, Tsukasa Hori, Takashi Ito, Toshihiro Nishisaka, Akira Sumitani, Osamu Wakabayashi, Hakaru Mizoguchi, Hiroaki Nakarai, Naoto Hisanaga, Takeshi Matsunaga, Hirokazu Tanaka, Tatsuya Ariga, Syouich Sakanishi, Takeshi Okamoto, Ryoichi Nodomi, Takashi Suzuki, Yuichi Takabayashi, Hitoshi Tomaru, Kiyoharu Nakao, "Performance of a highly stable 2-kHz operation KrF laser", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354313; https://doi.org/10.1117/12.354313

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