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26 July 1999 Reduction of isolated-dense bias by optimization off-axis illumination for 150-nm lithography using KrF
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Abstract
With KrF and off-axis illumination (OAI) technique we should set up 150nm lithography process without using phase shift mask. But isolated-dense bias (ID bias) makes 150nm lithography process difficult. We investigated ID bias trend at different OAI condition and found that it could be reduced by optimizing OAI condition. We represent OAI as quadrupole center (sigma) R and pole size radius r. With high NA, small R and small r we can reduce ID bias but cannot eliminate completely at 150nm lithography. Also we found out that ID bias of duty patterns are more severe than that of dense and isolated patterns. Using OAI at a certain space width between lines, the width of lien has its minimum. This line thinning phenomena at this weak zone depends on OAI condition such as NA, R and coherence value. We compared simulation data with experimental result and could see the same phenomena at simulation data. Therefore OPC is necessary to avoid this weak zone. By experiment and simulation with NA higher than 0.65 and Optical Proximity Correction, we could set up 150nm lithography process with below 0.20micrometers periphery pattern design rule.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seok-Kyun Kim, Chang-Nam Ahn, Seo-Min Kim, Young-Mog Ham, and Ki-Ho Baik "Reduction of isolated-dense bias by optimization off-axis illumination for 150-nm lithography using KrF", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354384
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