Resolution enhancement through optical proximity correction and stepper parameter optimization for 0.12-um mask pattern

Yong-Ho Oh; Jai-Cheol Lee; Sungwoo Lim

doi:10.1117/12.354373

26 July 1999 Resolution enhancement through optical proximity correction and stepper parameter optimization for 0.12-μm mask pattern

Yong-Ho Oh, Jai-Cheol Lee, Sungwoo Lim

Author Affiliations +

Proceedings Volume 3679, Optical Microlithography XII; (1999) https://doi.org/10.1117/12.354373
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

As the design rule of semiconductor microchips gets smaller, the distortion of a patterned image due to the optical proximity effect (OPE) becomes the limiting factor in the mass production. We developed an optical proximity correction (OPC) program that can be applied to a strong or attenuated phase shift mask as well as to a binary mask. The OPC program named OPERA is based on a stochastic approach as other rule-free OPC programs, but it has tow remarkable points. Firstly, proper cost function and optimization strategy enable us to achieve very closely clustered mask pattern that could be manufactured at a reasonable cost. Secondly, OPERA can carry out the optimization of illumination parameters for any modified illumination methods, such as, annular or quadrupole using the critical dimensions information of mask patterns.

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Yong-Ho Oh, Jai-Cheol Lee, and Sungwoo Lim "Resolution enhancement through optical proximity correction and stepper parameter optimization for 0.12-μm mask pattern", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); https://doi.org/10.1117/12.354373

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