26 July 1999 Resolution enhancement through optical proximity correction and stepper parameter optimization for 0.12-μm mask pattern
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Abstract
As the design rule of semiconductor microchips gets smaller, the distortion of a patterned image due to the optical proximity effect (OPE) becomes the limiting factor in the mass production. We developed an optical proximity correction (OPC) program that can be applied to a strong or attenuated phase shift mask as well as to a binary mask. The OPC program named OPERA is based on a stochastic approach as other rule-free OPC programs, but it has tow remarkable points. Firstly, proper cost function and optimization strategy enable us to achieve very closely clustered mask pattern that could be manufactured at a reasonable cost. Secondly, OPERA can carry out the optimization of illumination parameters for any modified illumination methods, such as, annular or quadrupole using the critical dimensions information of mask patterns.
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Yong-Ho Oh, Yong-Ho Oh, Jai-Cheol Lee, Jai-Cheol Lee, Sungwoo Lim, Sungwoo Lim, } "Resolution enhancement through optical proximity correction and stepper parameter optimization for 0.12-μm mask pattern", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354373; https://doi.org/10.1117/12.354373
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