26 July 1999 Revisiting F2 laser for DUV microlithography
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Abstract
A molecular fluorine laser, specifically tailored for photolithography needs, was developed. Single line operation at 157.6nm was achieved by means of a prism assembly. Laser operation at repetition rates up to 1 kHz without signs of power saturation results in an average power of 15W. The energy stability was equal to comparable ArF laser. Proper choice of materials and corona pre-ionization enabled gas lifetimes in line with current ArF laser technology, without any need for cryogenic purification.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Hofmann, Thomas Hofmann, Jean-Marc Hueber, Jean-Marc Hueber, Palash P. Das, Palash P. Das, Scott Scholler, Scott Scholler, } "Revisiting F2 laser for DUV microlithography", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354365; https://doi.org/10.1117/12.354365
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