26 July 1999 Silicon-oxynitride films prepared for 157-nm attenuated phase-shifting masks
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Suitable silicon-oxynitride films for constructing the attenuated phase shifting masks to be operated in the 157 nm excimer laser regime are obtained by varying the gas flow rations in a RF sputtering process. Characteristics of the films such as optical constants, material compositions, etching selectivity, surface profiles, and adhesion strength are experimentally analyzed. These results indicate that he silicon-oxynitride films thus fabricated can meet the requirements for building such APSM's working in the wavelength of 157 nm.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hsuen-Li Chen, Hsuen-Li Chen, Lon A. Wang, Lon A. Wang, L. S. Yeh, L. S. Yeh, F. D. Lai, F. D. Lai, } "Silicon-oxynitride films prepared for 157-nm attenuated phase-shifting masks", Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354314; https://doi.org/10.1117/12.354314

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