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10 March 1999 Applied electrostatic parallelogram actuators for microwave switches by standard CMOS process
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Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999) https://doi.org/10.1117/12.341171
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France
Abstract
This work fabricates a laminated-suspension microwave switch using the conventional CMOS process. The proposed microwave switch is fully compatible with an IC foundry service, and the post-process is completed with maskless dry-etching. In addition, the switch only requires a low dc voltage of around 18 V for electrostatic traction. This novel design corresponds to the 0.6 micrometers 3-metal CMOS process. A micromachined microwave switch consists of two electrostatic parallelogram actuators, two T-type connectors and one coplanar waveguide (CPW) on p-type silicon substrate. The microstructures are suspended over silicon substrate by maskless dry-etching oxide and silicon. Without an applied voltage, the actuators do not affect the CPW, accounting for why T-type connectors of actuators do not couple to microwave propagation. With an applied voltage, dc voltage is applied to the actuators to make T-type connectors contact with the signal line of CPW. The capacitance coupling becomes significantly larger than the first one to intercept microwave propagation.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kaihsiang Yen, Chienliu Chang, Peizen Chang, Jinghung Chiou, Jenn-Yi Chen, and Hunghsuan Lin "Applied electrostatic parallelogram actuators for microwave switches by standard CMOS process", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); https://doi.org/10.1117/12.341171
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