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10 March 1999 Characteristics of residual products in HF gas-phase etching of sacrificial oxides for silicon micromachining
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Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999) https://doi.org/10.1117/12.341163
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France
Abstract
We employed a newly developed HF gas-phase etching (GPE) process for the removal of sacrificial oxides. The structural layers are P-doped multi-stacked polysilicon and silicon epi-layer of SOI substrates and sacrificial layers are TEOS, LTO, PSG, and thermal oxides on silicon nitride or polysilicon substrates. The characteristics of residual products on polysilicon or silicon nitride were scrutinized by using SEM and AES. After GPE of TEOS, LTO, and PSG on the silicon nitride substrate, the polysilicon microstructures are stuck to the underlying substrate because neither the SiOxNy layers nor the H3PO4(H2O) layer vaporize. We found that the etching of TEOS, LTO, and thermal oxide on a polysilicon substrate shows no residual product and no stiction.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Won-Ick Jang, Chang-Auck Choi, Chang Seung Lee, Yoonshik Hong, and Jong-Hyun Lee "Characteristics of residual products in HF gas-phase etching of sacrificial oxides for silicon micromachining", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); https://doi.org/10.1117/12.341163
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