10 March 1999 Design and implementation of integrated BDJ detector in a standard CMOS technology
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Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999) https://doi.org/10.1117/12.341220
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France
Abstract
The integrated BDJ detector basically consists of two buried junctions for collection of photocarriers at different depths. It can operate not only as a photodetector, but also as a wavelength-sensitive detector, because the ratio of the deep junction photocurrent to the shallow junction photocurrent is wavelength-dependent. The BDJ detector can be implemented using a standard CMOS process. The optimum design for a particular application requires divers considerations, such as process parameters, detector sizing, on-chip interface electronics, temperature sensing and compensation, etc. In particular, some geometrical and electrical parameters have significant effects on the device behavior and performances, and detector size as well as on- chip circuitry should be properly defined to meet specifications. Also, temperature-dependence of characteristics may need to be compensated. Two examples concerning design of integrated BDJ detector for specific applications are shown. One is for detecting spectral changes of absorption, while the other is for building a self-calibrated microspectrophotometer.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guo Neng Lu, Gerard Sou, Mohamed Ben Chouikha, Mohamed Sedjil, "Design and implementation of integrated BDJ detector in a standard CMOS technology", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); doi: 10.1117/12.341220; https://doi.org/10.1117/12.341220
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