10 March 1999 General contact and hysteresis analysis of multidielectric MEMS devices under thermal and electrostatic actuation
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Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999); doi: 10.1117/12.341201
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France
Abstract
Many MEMS devices which are thermally and/or electrostatically actuated contain moveable components which may undergo contact. The behavior is further complicated when hysteresis is exhibited after contact. Generally, MEMS devices consist of multiple materials with different mechanical and electrical properties. These factors pose a challenge for modeling highly non-linear MEMS behavior. This paper present an improved approach to modeling contact and hysteresis between any two bodies in a MEMS device. In particular, the three assumptions are relaxed. First, previous methods for modeling contact were able to model only a single dielectric layer. The new approach is capable of modeling multi-dielectric layers. Second, previous modeling methods required the specification of contact faces. This restriction has been generalized to specifying contact entities. Third, previously, modeling methods required an air stop gap assumption above a conductor to avoid numerical difficulties in electrostatic calculations. The new approach developed removes the air stop gap assumption. More realistic mechanical contact is simulated. Electrostatic and thermal driven actuation is considered. A number of case examples is presented to demonstrate the utility of the new contact and hysteresis approach. First a suspended test-beam structure is analyzed under different sets of boundary constraints and loading. Then, contact of an electrostatically actuated deformable mirror is analyzed.
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Yie He, James Marchetti, Carlos Gallegus, "General contact and hysteresis analysis of multidielectric MEMS devices under thermal and electrostatic actuation", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); doi: 10.1117/12.341201; https://doi.org/10.1117/12.341201
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KEYWORDS
Dielectrics

Microelectromechanical systems

Silicon

Capacitance

Analytical research

Instrument modeling

Solid modeling

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