10 March 1999 Reactive ion etching of quartz and glasses for microfabrication
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Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999) https://doi.org/10.1117/12.341281
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France
Abstract
The reactive ion etching (RIE) of quartz and of silica-based glasses has been examined in CF4/CHF3 plasmas. The etch rate was shown to reduce strongly with an increasing percentage of non-volatile elements in the glass. The etching of the quartz and the Suprasil 2 and Herasil 2 glasses was consistent with a process of ion-enhanced chemical reaction as identified by Steinbruchel. For these substrates, the etch rate was directly dependent on the square root of bias voltage in the RIE and increased with the ratio of CF4:CHF3 in the gas mixture. The comparatively low etch rates of the LE, soda-lime and NA glasses were equivalent in both the CHF3/CF4 and Ar plasmas, indicating a process of sputter etching. The BK7 glass has shown intermediate characteristics with a higher etch rate in CF4/CHF3 than in Ar plasma, indicating ion enhanced chemical etching but with little dependence on the CF4:CHF3 gas ratio. These results have been applied in the fabrication of grating patterns.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick W. Leech, Geoffrey K. Reeves, "Reactive ion etching of quartz and glasses for microfabrication", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); doi: 10.1117/12.341281; https://doi.org/10.1117/12.341281
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