Paper
10 March 1999 Silicon hillocks elimination using a complexant redox alkaline system
Carmen Moldovan, Rodica Iosub, Dan C. Dascalu, Gheorghe Nechifor, Cornelia-Carmen Danila
Author Affiliations +
Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999) https://doi.org/10.1117/12.341176
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France
Abstract
This paper present the results from the investigation of the chemical anisotropic etching of single-crystal silicon in the following solutions: KOH, K3[Fe(CN)6] 0.1M, K4[Fe(CH)6] 3H2O 0.1M, KNO3 0.1M and/or complexant added. The complexants added in KOH solution were: Calix(4)arenes, Phenols and Ether Dibenzo 18 Crown 6. The result using also NaOH or LiOH H2O and complexants are presented. The reaction mechanism and the hillocks formation and elimination are analyzed. The results allow us to use the redox system and/or the organic complexants, to monitor the etching process, to obtain a smooth silicon surface, almost free of hillocks, to utilize the usual mask material resistant at the new etchants.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carmen Moldovan, Rodica Iosub, Dan C. Dascalu, Gheorghe Nechifor, and Cornelia-Carmen Danila "Silicon hillocks elimination using a complexant redox alkaline system", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); https://doi.org/10.1117/12.341176
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Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Etching

Hydrogen

Ions

Chemical species

Semiconducting wafers

Anisotropic etching

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