New method for simulation of nonlinear semiconductor microcavities

Sergey V. Fedorov; M. A. Kalitieevsky

doi:10.1117/12.335828

6 January 1999 New method for simulation of nonlinear semiconductor microcavities

Sergey V. Fedorov, M. A. Kalitieevsky

Proceedings Volume 3685, Laser Optics '98: Fundamental Problems of Laser Optics; (1999) https://doi.org/10.1117/12.335828
Event: Laser Optics '98, 1998, St. Petersburg, Russian Federation

Abstract

It has been designed and applied the method of transfer matrix for layered structures with second order nonlinearity, as new technique to simulate spectral characteristics of semiconductor microcavities. The nonlinearity of single layer is simulated by transfer matrix with 4 X 4 dimensions. Light intensity distributions and spectral dependencies for generator of second harmonic have been calculated. It has been shown that the most effective direction of second harmonic wave is not coincide with direction of incident wave. It is demonstrated the university of suggested algorithm and capability to extend it for other types of cavities and nonlinearities.

Citation Download Citation

Sergey V. Fedorov and M. A. Kalitieevsky "New method for simulation of nonlinear semiconductor microcavities", Proc. SPIE 3685, Laser Optics '98: Fundamental Problems of Laser Optics, (6 January 1999); https://doi.org/10.1117/12.335828

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