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6 January 1999 New method for simulation of nonlinear semiconductor microcavities
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It has been designed and applied the method of transfer matrix for layered structures with second order nonlinearity, as new technique to simulate spectral characteristics of semiconductor microcavities. The nonlinearity of single layer is simulated by transfer matrix with 4 X 4 dimensions. Light intensity distributions and spectral dependencies for generator of second harmonic have been calculated. It has been shown that the most effective direction of second harmonic wave is not coincide with direction of incident wave. It is demonstrated the university of suggested algorithm and capability to extend it for other types of cavities and nonlinearities.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey V. Fedorov and M. A. Kalitieevsky "New method for simulation of nonlinear semiconductor microcavities", Proc. SPIE 3685, Laser Optics '98: Fundamental Problems of Laser Optics, (6 January 1999);

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