5 May 1999 Molecular dynamics calculations of the early stages of thin film formation
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Proceedings Volume 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (1999) https://doi.org/10.1117/12.347412
Event: International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1998, St. Petersburg, Russian Federation
Abstract
In this contribution we will discuss recent results obtained from Molecular Dynamics (MD) calculations of early stages of thin film deposition for metal atoms and clusters on metal substrates. As a first example we will discuss the deposition of Cu atoms on a Pb single crystal surface. In this case our MD calculations could verify an experimentally observed new growth mode in deposition, which was named subsurface island growth. As a second example we will discuss the possibilities and processes occurring during thin film deposition, if instead of atoms clusters (consisting of up to a few hundred atoms) are used. As an example we present the deposition of Al cluster of different size (ranging from 60 atoms up to 1000 atoms per cluster) on a Cu surface.
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Gerhard Betz, Wolfgang Husinsky, "Molecular dynamics calculations of the early stages of thin film formation", Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); doi: 10.1117/12.347412; https://doi.org/10.1117/12.347412
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