5 May 1999 Radiation-stimulated processes in Si surface layers
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Proceedings Volume 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (1999) https://doi.org/10.1117/12.347417
Event: International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1998, St. Petersburg, Russian Federation
Abstract
Molecular dynamics computer simulations have been performed to study the character of disordering atom configurations in Si surface layers. The relaxation of free Si surface was investigated. The main structural parameters were calculated, such as a distribution of angles between chemical bonds, the density of dangling bonds, structural peculiarities of Si surface layers and radiation effects. It was concluded that Si surface at real conditions is a disordered phase similar to a- Si.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick W. M. Jacobs, Patrick W. M. Jacobs, Arnold E. Kiv, Arnold E. Kiv, Vladimir N. Soloviev, Vladimir N. Soloviev, Tatiana N. Maximova, Tatiana N. Maximova, Valery V. Chislov, Valery V. Chislov, } "Radiation-stimulated processes in Si surface layers", Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); doi: 10.1117/12.347417; https://doi.org/10.1117/12.347417
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