Theoretical and experimental studies of (AlN)1-x(SIC)x layer structures formed by N+ and Al+ coimplantation in 6H-SiC

Dmitri V. Kulikov; Joerg Pezoldt; Peter V. Rybin; Wolfgang Skorupa; Yuri V. Trushin; Rossen A. Yankov

doi:10.1117/12.347431

5 May 1999 Theoretical and experimental studies of (AlN)_1-x(SIC)_x layer structures formed by N+ and Al+ coimplantation in 6H-SiC

Dmitri V. Kulikov, Joerg Pezoldt, Peter V. Rybin, Wolfgang Skorupa, Yuri V. Trushin, Rossen A. Yankov

Author Affiliations +

Proceedings Volume 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (1999) https://doi.org/10.1117/12.347431
Event: International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1998, St. Petersburg, Russian Federation

Abstract

The (SiC)_1-x(AlN)_x binary system is widely investigated now. In reference 1 the possibility of using of ion implantation (Al⁺ and N⁺) in 6H-SiC under high temperatures to create (SiC)_1-x(AlN)_x is first reported. The samples having been heated to 200 degrees Celsius, 400 degrees Celsius, 600 degrees Celsius and 800 degrees Celsius have been irradiated by ions, and after it the RBS-profiles of generated defects have been obtained. Then the samples have been annealed at 1200 degrees Celsius and RBS- spectra have been obtained again. The main results obtained in reference 1 and 2 are presented. In reference 2 - 4 we suggested the model of defect structure evolution in silicon carbide under ion irradiation. The aim of this work is to develop this model taking into account internal stress field.

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Dmitri V. Kulikov, Joerg Pezoldt, Peter V. Rybin, Wolfgang Skorupa, Yuri V. Trushin, and Rossen A. Yankov "Theoretical and experimental studies of (AlN)_1-x(SIC)_x layer structures formed by N+ and Al+ coimplantation in 6H-SiC", Proc. SPIE 3687, International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 May 1999); https://doi.org/10.1117/12.347431

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