Chemical vapor deposition of silicon dioxide doped with Er and Al from volatile organometallic compounds

Gennadi V. Mishakov

doi:10.1117/12.337538

20 January 1999 Chemical vapor deposition of silicon dioxide doped with Er and Al from volatile organometallic compounds

Gennadi V. Mishakov

Author Affiliations +

Proceedings Volume 3688, 6th International Conference on Industrial Lasers and Laser Applications '98; (1999) https://doi.org/10.1117/12.337538
Event: 6th International Conference on Industrial Lasers and Laser Applications '98, 1998, Shatura, Moscow Region, Russian Federation

Abstract

The new fabrication technique of silicon dioxide Er- and Al- co-doped films is reported. Silicon dioxide film is doped from proper metal (beta) -diketonates during this chemical vapor deposition. The film photoluminescence decay process was measured as a function of deposition conditions and (Al)/(Er) ratio. The achieved photoluminescence lifetime lends support to the validity of proposed technique which can be used for preparation of active media for planar optical waveguide amplifiers.

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Gennadi V. Mishakov "Chemical vapor deposition of silicon dioxide doped with Er and Al from volatile organometallic compounds", Proc. SPIE 3688, 6th International Conference on Industrial Lasers and Laser Applications '98, (20 January 1999); https://doi.org/10.1117/12.337538

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