26 July 1999 512x512-element GeSi/Si heterojunction infrared FPA
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Proceedings Volume 3698, Infrared Technology and Applications XXV; (1999); doi: 10.1117/12.354561
Event: AeroSense '99, 1999, Orlando, FL, United States
Abstract
We have developed a monolithic 512 X 512 element GeSi/Si heterojunction IR focal plane array (FPA). The operation mechanism of the GeSi/Si heterojunction detector is the same as that of the PtSi/Si Schottky-barrier detector. We have fabricated the GeSi/Si heterojunction using MBE technology, and have confirmed that ideal strained GeSi films are grown on Si substrate. We have evaluated the dependencies of spectral responsivity on the Ge composition, impurity concentration and GeSi thickness, and have optimized them for 8-12 micrometers IR detection. The 512 X 512 element FPA has a pixel size of 34 X 34 micrometers 2 and a fill factor of 59 percent. A low noise equivalent temperature difference of 0.08 K was obtained with a 300 K background with a very small responsivity dispersion of 2.2 percent.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideo Wada, Mitsuhiro Nagashima, Kenkichi Hayashi, Junji Nakanishi, Masafumi Kimata, Norimasa Kumada, Sho Ito, "512x512-element GeSi/Si heterojunction infrared FPA", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); doi: 10.1117/12.354561; https://doi.org/10.1117/12.354561
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KEYWORDS
Heterojunctions

Sensors

Staring arrays

Germanium

Boron

Infrared radiation

Quantum efficiency

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