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26 July 1999 8- to 9-μm and 14- to 15-μm two-color 640x486 GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane array camera
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Abstract
An optimized long-wavelength two-color quantum well IR photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi- insulating GaAs substrate by molecule beam epitaxy (MBE). This wafer was processed into several 640 X 486 format monolithically integrated 8-9 and 14-15 micrometers two-color QWIP focal plane arrays (FPAs). These FPAs were then hybridized to 640 X 486 silicon CMOS readout multiplexers. A thinned FPA hybrid was integrated into a liquid helium cooled dewar to perform electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 micrometers detectors in the FPA have shown background limited performance (BLIP) at 70 K operating temperature, at 300 K background with f/2 cold stop. The 14-15 micrometers detectors of the FPA have reached BLIP at 40 K operating temperature at the same background conditions. In this paper we discuss the performance of this long-wavelength dualband QWIP FPA in quantum efficiency, detectivity, noise equivalent temperature difference, uniformity, and operability.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sarath D. Gunapala, Sumith V. Bandara, Anjali Singh, John K. Liu, S. B. Rafol, Edward M. Luong, Jason M. Mumolo, N. Q. Tran, John David Vincent, C. A. Shott, James F. Long, and Paul D. LeVan "8- to 9-μm and 14- to 15-μm two-color 640x486 GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane array camera", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); https://doi.org/10.1117/12.354502
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