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26 July 1999 Advances in amorphous silicon uncooled IR systems
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A new class of uncooled IR systems has been developed based on advances in both amorphous silicon detectors and signal/system processing techniques. Not only are these devices uncooled but they operate over a wide system ambient temperature range without the use of TEC's or choppers. The devices are DC biased and provide radiometric information from each pixel without the use of a calibrated source. The current imaging system are medium to low resolution. They were designed with a very disciplined 'concept-to-cost' technique in which cost, power, sizes, weight and performance were traded off in the stated order. The result has been a new generation of 'ambient temperature' thermal imaging system and radiometers.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John F. Brady III, Thomas R. Schimert, David D. Ratcliff, Roland W. Gooch, Bobbi Ritchey, P. McCardel, K. Rachels, Steven J. Ropson, Marty Wand, M. Weinstein, and John Wynn "Advances in amorphous silicon uncooled IR systems", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999);

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