26 July 1999 GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers
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Proceedings Volume 3698, Infrared Technology and Applications XXV; (1999); doi: 10.1117/12.354563
Event: AeroSense '99, 1999, Orlando, FL, United States
Abstract
The submillimeter wavelength region is the last undeveloped spectral window in astronomy. The poor transmission of the atmosphere, and the lack of high-performance detectors prevent astronomical observations in this window. We have recently started a development of photoconductors utilizing shallow donor levels in GaAs semiconductors. The GaAs photoconductor promises to be a good candidate of a photo detector for use in future space mission for submillimeter astronomy. We have constructed facilities for liquid-phase epitaxy to obtain ultra-pure GaAs crystals which were absolutely necessary for a fabrication of photoconductors. The first experimental results are reported.
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Osamu Abe, Hiroshi Murakami, Yoshihiko Okamura, Moriaki Wakaki, Taisuke Yakawa, Masayasu Koyama, Tsutomu Ogawa, "GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); doi: 10.1117/12.354563; https://doi.org/10.1117/12.354563
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KEYWORDS
Gallium arsenide

Sensors

Crystals

Astronomy

Liquid phase epitaxy

Photoresistors

Liquids

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