26 July 1999 GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers
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Abstract
The submillimeter wavelength region is the last undeveloped spectral window in astronomy. The poor transmission of the atmosphere, and the lack of high-performance detectors prevent astronomical observations in this window. We have recently started a development of photoconductors utilizing shallow donor levels in GaAs semiconductors. The GaAs photoconductor promises to be a good candidate of a photo detector for use in future space mission for submillimeter astronomy. We have constructed facilities for liquid-phase epitaxy to obtain ultra-pure GaAs crystals which were absolutely necessary for a fabrication of photoconductors. The first experimental results are reported.
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Osamu Abe, Hiroshi Murakami, Yoshihiko Okamura, Moriaki Wakaki, Taisuke Yakawa, Masayasu Koyama, Tsutomu Ogawa, "GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); doi: 10.1117/12.354563; https://doi.org/10.1117/12.354563
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