26 July 1999 Influence of gamma irradiation on the performance of HgCdTe photovoltaic devices
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Abstract
The 1-3 micrometers short wave IR detector has many applications in astronomy, optical radar and optical communications. The devices applied in air will inevitably influenced by all kinds of particle irradiation. So it is very important to study the influence of irradiation to the device performance. In this paper HgCdTe photovoltaic devices with different wavelengths were irradiated by gamma rays under different doses. The changes of their response spectrum, I-V characteristics, photo signal, noise, responsivity and detectivity were studied. It is observed that there is no noticeable change in the peak and cut-off wavelength after 22.7Mrad gamma irradiation, but the responsivity and detectivity decreased within a large extent. The results were analyzed at last.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinwen Hu, Xinwen Hu, Ke-Xue Zhu, Ke-Xue Zhu, Xiangyang Li, Xiangyang Li, Jiaxiong Fang, Jiaxiong Fang, } "Influence of gamma irradiation on the performance of HgCdTe photovoltaic devices", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); doi: 10.1117/12.354496; https://doi.org/10.1117/12.354496
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