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26 July 1999 Readout device processing electronics for IR linear and focal plane arrays
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Abstract
Silicon read-out devices with input direct injection and buffered direct injection circuits and charge coupled devices (CCD) multiplexers to be used with n+-p- or p+-n-photovoltaic (PV) multielement arrays were designed, manufactured and tested in T equals 77-300 K temperature temperature region. Into these read-out devices were incorporated the testing switches which attach the sources of direct injection transistors to the common load resistors to imitate the output signal of mercury cadmium telluride photodiodes. The silicon read-out devices for 2 X 64 n+-p- or p(superscript +n- linear arrays and n(superscript +-p-2 X 4 X 128 time delay and integration arrays with skimming and partitioning functions were manufactured by n- or p-channel MOS technology with buried channel CCD register. The designed CCD readout devices are driven with four- or two-phase clock pulses.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fiodor F. Sizov, Yurii P. Derkach, Yu. G. Kononenko, and Vladimir P. Reva "Readout device processing electronics for IR linear and focal plane arrays", Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); https://doi.org/10.1117/12.354581
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