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19 March 1999 Defect localization in CuInSe2 solar modules by thermal infrared microscopy
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Abstract
In this paper the IR Microscopy Thermosensoric Defect Localization method ((mu) -TDL) is presented. This technique is based on a novel IR microscopy lens which permits to take IR images with a spatial resolution of better than 10 micrometer, which is close to the theoretical limit. The (mu) -TDL method is demonstrated on defective CuInSe2 solar modules consisting of several solar cells serially interconnected and having solar efficiencies considerably below the average. By using the accurate localization of the defects by the (mu) -TDL method further investigations were performed and the origin for the defect was found. The (mu) -TDL method is also applicable to solar cells and modules consisting of other materials, such as amorphous Si or CdTe. The (mu) TDL method is suitable for the solar module development as well as for non- destructive production control.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Werner Gross, H. Scheuerpflug, Juergen Zettner, Thomas Hierl, Max J. Schulz, and Franz Karg "Defect localization in CuInSe2 solar modules by thermal infrared microscopy", Proc. SPIE 3700, Thermosense XXI, (19 March 1999); https://doi.org/10.1117/12.342276
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