24 March 1999 Growth and characterization of YAG:Cr4+epitaxial films
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Abstract
Epitaxial films with thickness of 10 - 250 micrometers of yttrium aluminum garnet (YAG) doped with Cr were grown by liquid phase epitaxy technique on YAG:Nd substrates. Co-doping with Mg2+ is used to force the Cr4+ valent state formation. Dependence of absorption spectra of obtained films on melt-solution composition, growth conditions and thermal treatment in reducing and oxidizing atmospheres is studied. A very intensive absorption band in UV region with maximum at 275 nm was found both in co-doped and YAG:Mg2+ epifilms caused probably by oxygen vacancies compensating the excess charge of Mg2+. Its intensity correlates with Cr4+ content in the film in that way: it decreases with Cr4+ entering in the film. The absorption being characteristic for YAG:Cr4+ crystals is found in co-doped films grown at higher temperatures (1000 - 1100 degree(s)C). The processes occurring during annealing are discussed.
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Sergii B. Ubizskii, Igor M. Syvorotka, Sergii S. Melnyk, Andrej O. Matkovskii, Krzysztof Kopczynski, Zygmunt Mierczyk, Zygmunt Frukacz, "Growth and characterization of YAG:Cr4+epitaxial films", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.343022; https://doi.org/10.1117/12.343022
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