24 March 1999 Growth and characterization of YAG:Cr4+epitaxial films
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Abstract
Epitaxial films with thickness of 10 - 250 micrometers of yttrium aluminum garnet (YAG) doped with Cr were grown by liquid phase epitaxy technique on YAG:Nd substrates. Co-doping with Mg2+ is used to force the Cr4+ valent state formation. Dependence of absorption spectra of obtained films on melt-solution composition, growth conditions and thermal treatment in reducing and oxidizing atmospheres is studied. A very intensive absorption band in UV region with maximum at 275 nm was found both in co-doped and YAG:Mg2+ epifilms caused probably by oxygen vacancies compensating the excess charge of Mg2+. Its intensity correlates with Cr4+ content in the film in that way: it decreases with Cr4+ entering in the film. The absorption being characteristic for YAG:Cr4+ crystals is found in co-doped films grown at higher temperatures (1000 - 1100 degree(s)C). The processes occurring during annealing are discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergii B. Ubizskii, Sergii B. Ubizskii, Igor M. Syvorotka, Igor M. Syvorotka, Sergii S. Melnyk, Sergii S. Melnyk, Andrej O. Matkovskii, Andrej O. Matkovskii, Krzysztof Kopczynski, Krzysztof Kopczynski, Zygmunt Mierczyk, Zygmunt Mierczyk, Zygmunt Frukacz, Zygmunt Frukacz, } "Growth and characterization of YAG:Cr4+epitaxial films", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.343022; https://doi.org/10.1117/12.343022
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