24 March 1999 High-temperature electrical properties of photorefractive CdTe<Ge> crystals
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Abstract
Measurements of high-temperature electrical properties ([e-], (mu) , (sigma) ) were performed using Bridgman grown Ge-doped CdTe single crystals. The isothermal (873, 973, 1073 K) carrier concentration dependences under different Cd vapor pressure and temperature dependences of carrier concentration were investigated. The experimental results were compared with those for pure CdTe single crystals. The analysis of the obtained results agrees with the model of amphoteric behavior of Ge in CdTe under chosen conditions (high PCd value and temperature 1073 K).
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P. Fochuk, P. Fochuk, } "High-temperature electrical properties of photorefractive CdTe<Ge> crystals", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.342981; https://doi.org/10.1117/12.342981
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