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24 March 1999 High-temperature solution growth of oxide single crystals
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Abstract
High temperature solution growth of oxide single crystals has become very useful method in investigations of new classes of materials for opto-electronics. In this paper applicability of this method, its advantages, and disadvantages have been discussed. Investigations of crystallization of several oxides such as mixed sillenites Bi12Ti1-xMxO20 (M equals Pb, Ga, V), double tungstates (K1-xCsxDy(WO4)2 and KGd(WO4)2:Nd), and borates (CsLiB6O10 and YAl3(BO3)4:Nd) carried out by this technique have been described.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Majchrowski "High-temperature solution growth of oxide single crystals", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.342984
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