Influence of In content on electron concentration in CdTe at high temperatures

P. Fochuk; O. Korovyanko; O. Panchuk

doi:10.1117/12.342974

24 March 1999 Influence of In content on electron concentration in CdTe at high temperatures

P. Fochuk, O. Korovyanko, O. Panchuk

Proceedings Volume 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications; (1999) https://doi.org/10.1117/12.342974
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

High effect measurements were carried out in the 500 - 1200 K temperature range under controlled Cd vapor pressure (P_Cd equals 10^-5-3 atm). Samples' saturation by In was performed from the vapor phase at 1073 K under P_In during 24 or 240 hours. The In concentration in the sample was about approximately 10¹⁹ and approximately 10²⁰ at/cm³ respectively. Up to 500 K and P^max_Cd the electron concentration [e^-] in the heavy doped samples is temperature independent, it is characterized by the slope (Delta) E equals 0.4 eV and reaches the maximum value of approximately 3 X 10¹⁸ at/cm³. The temperature dependence in the sample, containing approximately 10¹⁹ at/cm³ In, has a maximum ]e^-] value and then decreases. The results can be described by a defect structure model, supposing, that the dominating defects are In⁺_Cd defects and complex associates of the (In⁺_Cd V^2-_Cd)^- type, but an essential role play V^2-_Cd and the increase of In solubility with temperature also.

Citation Download Citation

P. Fochuk, O. Korovyanko, and O. Panchuk "Influence of In content on electron concentration in CdTe at high temperatures", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.342974

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