Paper
24 March 1999 Single crystals of ZnTe and (Cd,Zn)Te produced by physical vapor transport technique for MBE (substrates) and other applications
Andrzej Mycielski, A. Szadkowski, E. Lusakowska, Leszek Kowalczyk, J. Domagala, Jadwiga Bak-Misiuk, B. Witkowska, Krzysztof Adamiec, Jaroslaw Rutkowski, A. Jedrzejczak
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Abstract
The growth of the single crystals of ZnTe and Cd1-xZnxTe (x <EQ 0.25) by a simple, horizontal, low temperature physical vapor transport technique (PVT) is presented as an example of the application of the PVT technique to the technology of MBE substrates: large (1 inch in diameter), twin-free crystals of wide-gap II-VI compounds of very high quality. The advantages of the PVT technique are emphasized. The results of the characterization of the grown crystals are presented.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Mycielski, A. Szadkowski, E. Lusakowska, Leszek Kowalczyk, J. Domagala, Jadwiga Bak-Misiuk, B. Witkowska, Krzysztof Adamiec, Jaroslaw Rutkowski, and A. Jedrzejczak "Single crystals of ZnTe and (Cd,Zn)Te produced by physical vapor transport technique for MBE (substrates) and other applications", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); https://doi.org/10.1117/12.342973
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KEYWORDS
Crystals

Excitons

Luminescence

Gallium arsenide

Cadmium

Etching

Zinc

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