24 March 1999 Te-doped GaAs crystals used for passive Q-switching of Nd:YAG laser resonators
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Abstract
Results of investigations of Te doped GaAs, semiconductor nonlinear absorber, used for passive Q-switching of Nd:YAG laser resonators have been presented. The transmission changes dependence of the examined absorber on power density of the passing diagnostic radiation have been determined. There were estimated the following parameters: non-active losses, absorption cross-section, saturation energy, concentration of active centers, relaxation time, and energy losses caused by absorber bleaching. Generation characteristics of diode pumped YAG:Nd3+ laser with GaAs:Te modulator have been investigated. Generation of a train of pulses with duration of 6.5 ns, frequency of 6.7 kHz and energy 9 (mu) J has been obtained. Q-switched pulses showed intensity and timing jitter depending on the positions of intracavity elements.
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Zygmunt Mierczyk, Krzysztof Kopczynski, "Te-doped GaAs crystals used for passive Q-switching of Nd:YAG laser resonators", Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.343019; https://doi.org/10.1117/12.343019
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