8 April 1999 Carrier lifetime in Hg1-xCdxTe grown by molecular beam epitaxy
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Abstract
Carrier lifetimes in Hg1-xCdxTe (x equals 0.195 - 0.230) structures grown by molecular beam epitaxy are presented. The carrier lifetimes have been determined from photoconductivity decay after excitation with radiation pulse at various wavelength. It is clearly shown that borders of epitaxial layers influence their photoelectrical properties.
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Aleksander V. Voitsekhovskii, Aleksander V. Voitsekhovskii, Yu. A. Denisov, Yu. A. Denisov, Andrej P. Kokhanenko, Andrej P. Kokhanenko, N. A. Kulchitskii, N. A. Kulchitskii, "Carrier lifetime in Hg1-xCdxTe grown by molecular beam epitaxy", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); doi: 10.1117/12.344750; https://doi.org/10.1117/12.344750
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