Paper
8 April 1999 Effect of laser irradiation on (Cd,Hg)Te properties
Apollinariy Zaginey, Bohdan K. Kotlyarchuk, Volodymyr G. Savitsky, V. Pisarevsky
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Abstract
Experimental investigations of (Cd,Hg)Te have been performed with the use of ns- and ms-duration pulses of solid state laser. Changes in the chemical composition of the irradiated surface have been analyzed by means of X-ray photoelectron and Auger electron spectroscopies. Single crystalline HgTe and (Cd,Hg)Te wafers and epitaxial films have been used as the experimental samples. Processes of integral evaporation with generation of a molten zone with thickness up to several micrometers dominate upon ns-pulses irradiation and crystallization follows autoepitaxy laws. There was not observed increase of linear defects density in the layer near surface. Inverse layer depth in n-(Cd,Hg)Te coincides with molten zone. In the case of ms-pulses the influenced zone is several tenth micrometers thick. Irradiation of the samples at T equals 500 - 600 K in saturated Hg vapor completely suppresses the change of the surface composition. Heating of (Cd,Hg)Te sample leads to generation of a great number of acceptor-type native defects. As a results p-n junctions are formed in n-(Cd,Hg)Te by pulsed laser irradiation.
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Apollinariy Zaginey, Bohdan K. Kotlyarchuk, Volodymyr G. Savitsky, and V. Pisarevsky "Effect of laser irradiation on (Cd,Hg)Te properties", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344753
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KEYWORDS
Crystals

Laser irradiation

Mercury

Surface finishing

Laser therapeutics

X-rays

Laser crystals

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