Electronic properties of grown-in defects in semi-insulating GaAs

Roman Kozlowski; Michal Pawlowski; Pawel Kaminski; J. Cwirko

doi:10.1117/12.344736

8 April 1999 Electronic properties of grown-in defects in semi-insulating GaAs

Roman Kozlowski, Michal Pawlowski, Pawel Kaminski, J. Cwirko

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344736
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Defect structure of semi-insulating GaAs substrates manufactured by various vendors were compared using High Resolution Photo-Induced Transient Spectroscopy. A number of defect centers related to native defects and metallic impurities were detected and the concentrations of these centers were estimated.

Citation Download Citation

Roman Kozlowski, Michal Pawlowski, Pawel Kaminski, and J. Cwirko "Electronic properties of grown-in defects in semi-insulating GaAs", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344736

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